产品说明
一般描述
Atomic number of base material: 40 Zirconium
应用
Advanced precursor for atomic layer deposition of ZrO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.
Precursors Packaged for Depositions Systems
包装
10 g in stainless steel cylinder
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.
特点和优势
Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 ℃. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
基本信息
| 线性分子式 | Zr(CH3C5H4)2CH3OCH3 |
| 分子量 | 295.53 |
| MDL编号 | MFCD16875687 |
| PubChem化学物质编号 | 329764163 |
| NACRES | NA.23 |
产品性质
| 形式 | liquid |
| reaction suitability | core: zirconium |
| 颜色 | colorless |
| bp | 110 ℃/0.5 mmHg (lit.) |
| 密度 | 1.27 g/mL±0.01 g/mL at 25 ℃ (lit.) |
| SMILES string | C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC |
| InChI | 1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1 |
| InChI key | LFGIFPGCOXPKMG-UHFFFAOYSA-N |
安全信息
| 象形图 |  |
| 警示用语： | Warning |
| 危险声明 | H302 - H315 - H319 |
| 预防措施声明 | P305 + P351 + P338 |
| 危险分类 | Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2 |
| 储存分类代码 | 10 - Combustible liquids not in Storage Class 3 |
| WGK | WGK 3 |
| 闪点(F) | 226.4 °F |
| 闪点(C) | 108 ℃ |
