产品介绍：
Technical Note:
1. Useful precursor for the atomic layer deposition of tantalum oxide and tantalum nitride.
References:
1.Journal of Nanosci. and Nanotechno., 2013, 13, 4097. 2.Semicond. Sci. Tech., 2012, 27, 074003/1.
3.Chem. Vapor Depos., 2011, 17, 37. I
4.Electrochem. Solid St., 2010, 13, H426.
5. J. Electrochem. Soc., 2010, 157, H652.
6.J.Electrochem. Soc., 2009, 156, H852.
