产品说明
一般描述
Device configuration:
This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.
应用
GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.
- Graphene device research
- FET based sensor research for active materials deposited on graphene
- Chemical sensors
- Biosensors
- Bioelectronics
- Magnetic sensors
- Photodetectors
特点和优势
Device Features:
- State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
- Devices are not encapsulated and can be functionalized by additives
- Perfect platform for sensor research and development
- 36 individual graphene FETs per chip
- Mobilities typically > 1000 cm2/V·s
注意
Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:
- Be careful when handling the graphene FET chip.
- Tweezers should not contact the device area directly.
产品性质
| 描述 | Dirac point:< 50 V Gate Oxide material: SiO2 Gate Oxide thickness: 90 nm Graphene field-effect mobility: >1000 cm2/V·s Maximum gate-source voltage: ± 50 V Maximum temperature rating: 150 ℃ Maximum drain-source current density: 107 A/cm2 Metallization: Chromium 2 nm/Gold 50 nm Monolayer CVD grown Graphene based field effect transistors (FET) S10 Residual charge carrier density: <2 x 1012 cm-2 Resistivity of substrate: 1-10 Ω·cm Yield >75% |
安全信息
| 储存分类代码 | 11 - Combustible Solids |
| WGK | WGK 3 |
| 闪点(F) | Not applicable |
| 闪点(C) | Not applicable |
