产品说明
一般描述
Pure Strip is suitable for stripping both positive and negative photoresists in addition to other organic compounds in a variety of semiconductor, photomask, and IC photolithography compounds. High yields can be achieved due to the high purity/low particulate composition of Pure Strip.
Advantages Pure Strip include negligible attack on exposed metal surfaces, including aluminum, vs. other acidic formulations, residue-free rinsing, and extended bath life (minimum of five days at room temperature). Pure Strip is ready to use and requires no mixing.
应用
Pure Strip may be used at room temperature or at elevated temperature. Higher temperatures will increase the activity but decrease the bath life (1 day at 60-80 ℃). Substrates are stripped of photoresist and cleaned effectively with minimal attack on aluminum (approximately 35 Angstroms/minute at room temperature) and negligible attack on other metals and alloys such as titanium, Ti-tungsten, copper, tantalum silicide, and ITO.
基本信息
| NACRES | NA.23 |
产品性质
| 质量水平 | 100 |
| 形式 | liquid |
安全信息
| 象形图 |  |
| 警示用语： | Danger |
| 危险声明 | H290 - H314 |
| 预防措施声明 | P234 - P280 - P303 + P361 + P353 - P304 + P340 + P310 - P305 + P351 + P338 - P363 |
| 危险分类 | Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1A |
| 储存分类代码 | 8B - Non-combustible, corrosive hazardous materials |
| WGK | WGK 3 |
| 闪点(F) | Not applicable |
| 闪点(C) | Not applicable |
