产品介绍:
产品说明
一般描述
- Graphene film.
- Growth method: CVD synthesis.
- Appearance: Transparent film.
- Transparency: >97%.
- Coverage: >95%.
- Number of graphene layers: 1.
- Thickness (theoretical): 0.345 nm.
- FET electron mobility on Al2O3: 2000 cm2/Vs.
- Hall electron mobility on SiO2/Si: 4000 cm2/Vs.
- Sheet resistance on SiO2/Si: 450±40 Ω/sq (1cm x1cm).
- Grain size: Up to 10 μm.
- Substrate: Copper Foil.
- Thickness: 18 μm.
应用
- Flexible batteries.
- Electronics.
- Aerospace industry.
- MEMS and NEMS.
- Microactuators.
- Conductive coatings.
产品性质
质量水平 | 100 |
形式 | film |
安全信息
储存分类代码 | 13 - Non Combustible Solids |
WGK | WGK 2 |
闪点(F) | Not applicable |
闪点(C) | Not applicable |