应用
Indium(III) phosphide is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct band gap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

备注
Store in a cool, dry conditions in a well sealed container. Incompatible with oxidizing agent.

基本信息

MDL
MFCD00016153

EINECS
244-959-5

分子式
InP

分子量
145.79

熔点
1070°

密度
4.81

灵敏度
Ambient temperatures.

形态
Pieces

溶解性
Insoluble in water.

Merck
14,4953

GHS危害和防范说明

GHS符号

Hazard Statements
H351
Suspected of causing cancer.

Precautionary Statements
P201-P280-P202-P308+P313-P405-P501a
Obtain special instructions before use.Wear protective gloves/protective clothing/eye protection/face protection.Do not handle until all safety precautions have been read and understood.IF exposed or concerned: Get medical advice/attention.Store locked up.Dispose of contents/container in accordance with local/regional/national/international regulations.

安全信息

危险类别
40
Limited evidence of a carcinogenic effect.

安全等级
36/37
Wear suitable protective clothing and gloves.

欧盟危险品标志

RTECS
NL1800000

TSCA
是