应用
Hafnium(IV) oxide is an intermediate. Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices.

备注
For vacuum deposition, Monoclinic

基本信息

MDL
MFCD00003565

EINECS
235-013-2

分子式
HfO₂

分子量
210.49

熔点
2774°

密度
9.68

灵敏度
Ambient temperatures.

形态
3-12mm Sintered Lump

溶解性
Insoluble in water.

Merck
14,4588

安全信息

TSCA
是