应用
For vacuum deposition. In the production of catalysts. Used as part of the manufacturing of semiconductor devices. Has been shown to demonstrate catalytic properties and has also been used as an insulating barrier in tight junctions.

备注
Stable. Incompatible with magnesium.

基本信息

MDL
MFCD00011020

EINECS
234-691-7

分子式
Ga₂O₃

分子量
187.44

熔点
1900°

密度
6.44

折射率
1.92

灵敏度
Ambient temperatures.

形态
3-12mm Sintered Lump

溶解性
Insoluble in water. Soluble in most acids.

Merck
14,4346

安全信息

TSCA
是